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  Datasheet File OCR Text:
 AM81214-060
.REFRACTORY/ .EMI .RUGGEDI .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED ZED VSWR :1 THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE = 55 W MIN. WITH 6.6 dB GAIN OUT
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 BRANDING 81214-60
PIN CONNECTION
The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding :1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM81214-060 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
107 5.0 32 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.4 C/W
*Applies only to rated RF amplifier operation
August 1992
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AM81214-060
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Valu e Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 20mA IE = 2mA IC = 40mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 VCE = 28V IC = 2A
55 3.5 55 -- 15
-- -- -- -- --
-- -- -- 10 150
V V V mA --
DYNAMIC
Value Symbol Test Conditions Min. Typ. Max. Unit
POUT c GP
Note:
f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
1000 S 10%
PIN = 12W PIN = 12W PIN = 12W
VCC = 28V VCC = 28V VCC = 28V
55 50 6.6
63 57 7.2
-- -- --
W % dB
Pul se Widt h Duty Cycle
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AM81214-060
TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER
RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH
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AM81214-060
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
Z IN
PIN = 12.0 W VCC = 28 V Z0 = 50 ohms
FREQ. L = 1.2 GHz M = 1.3 GHz H = 1.4 GHz
ZIN () 6.0 + j 10.0 4.5 + j 11.0 4.0 + j 9.0
Z CL () 7.0 - j 10.0 6.0 - j 9.5 5.0 - j 9.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
PIN = 12.0 W VCC = 28 V Z0 = 50 ohms
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AM81214-060
TEST CIRCUIT
PACKAGE MECHANICAL DATA
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AM81214-060
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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